Národní úložiště šedé literatury Nalezeno 2 záznamů.  Hledání trvalo 0.01 vteřin. 
Calibration of SIMS method by implantation profiles
Janák, Marcel ; Průša, Stanislav (oponent) ; Bábor, Petr (vedoucí práce)
This bachelor thesis is concerned with a quantitative analysis of the dopant (C, H, Mg, O) distribution in MOCVD-grown AlGaN HEMTs by TOF.SIMS 5 instrument with cesium and oxygen sputtering. The main reason for the development of RSF SIMS measurement quantification method is a hardly predictable phenomenon of preferential sputtering and matrix effect. Calibration samples, prepared by ion implantation technique into homogeneous and periodic III-nitride AlN, GaN structures, are reproduced by an ion-atom interaction program TRIM. A part of this work is likewise a quantification of AlGaN matrix.
Calibration of SIMS method by implantation profiles
Janák, Marcel ; Průša, Stanislav (oponent) ; Bábor, Petr (vedoucí práce)
This bachelor thesis is concerned with a quantitative analysis of the dopant (C, H, Mg, O) distribution in MOCVD-grown AlGaN HEMTs by TOF.SIMS 5 instrument with cesium and oxygen sputtering. The main reason for the development of RSF SIMS measurement quantification method is a hardly predictable phenomenon of preferential sputtering and matrix effect. Calibration samples, prepared by ion implantation technique into homogeneous and periodic III-nitride AlN, GaN structures, are reproduced by an ion-atom interaction program TRIM. A part of this work is likewise a quantification of AlGaN matrix.

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